Research progress of low-temperature plasma polishing technology in chip material processing
DOI:
https://doi.org/10.18686/cest263Keywords:
low-temperature plasma polishing; plasma-assisted polishing (PAP); plasma electrolytic processing-mechanical polishing (PEP-MP); plasma chemical vaporization machining (PCVM); plasma assisted selective etching (PASE)Abstract
Low-temperature plasma polishing technology, by virtue of the plasma’s highly ionized characteristics, can accurately remove tiny defects and impurities on the surface of chip materials, improve the flatness and finish of chip materials, reduce mechanical damage and subsurface damage, and has a high material removal rate. This paper reviews the application status, advantages and limitations of plasma polishing technologies in the field of chip material processing. The principles and applications of plasma-assisted polishing, plasma chemical vaporization machining, plasma electrolytic processing-mechanical polishing and plasma assisted selective etching are specifically discussed, and their advantages and limitations are analyzed. Finally, the development of plasma chip-polishing technology is prospected, aiming to provide a useful reference for the continuous improvement of chip manufacturing processes and the future development of the microelectronics industry.
References
Zhang H, Qu Z, Tang H, et al. On-Chip Integration of a Covalent Organic Framework-Based Catalyst into a Miniaturized Zn–Air Battery with High Energy Density. ACS Energy Letters. 2021; 6(7): 2491-2498. doi: 10.1021/acsenergylett.1c00768 DOI: https://doi.org/10.1021/acsenergylett.1c00768
Qi D, Liu Y, Liu Z, et al. Design of Architectures and Materials in In‐Plane Micro‐supercapacitors: Current Status and Future Challenges. Advanced Materials. 2016; 29(5). doi: 10.1002/adma.201602802 DOI: https://doi.org/10.1002/adma.201602802
Peng Y, Akuzum B, Kurra N, et al. All-MXene (2D titanium carbide) solid-state microsupercapacitors for on-chip energy storage. Energy & Environmental Science. 2016; 9(9): 2847-2854. doi: 10.1039/c6ee01717g DOI: https://doi.org/10.1039/C6EE01717G
Song Y, Wang J, Liang L. Thickness effect on the mechanical performance of cathodes in lithium-ion batteries. Journal of Energy Storage. 2024; 86: 111417. doi: 10.1016/j.est.2024.111417 DOI: https://doi.org/10.1016/j.est.2024.111417
Chaniotakis N, Sofikiti N. Novel semiconductor materials for the development of chemical sensors and biosensors: A review. Analytica Chimica Acta. 2008; 615(1): 1-9. doi: 10.1016/j.aca.2008.03.046 DOI: https://doi.org/10.1016/j.aca.2008.03.046
Li Q. Integrated Circuit Chip Manufacturing Technology and Process Analysis (Chinese). Digital Technology & Application. 2023; 41(12): 46-48. doi: 10.19695/j.cnki.cn12-1369.2023.12.14
Lyons JL, Wickramaratne D, Janotti A. Dopants and defects in ultra-wide bandgap semiconductors. Current Opinion in Solid State and Materials Science. 2024; 30: 101148. doi: 10.1016/j.cossms.2024.101148 DOI: https://doi.org/10.1016/j.cossms.2024.101148
Jiang K, Zhang P, Song S, et al. A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN. Materials Science in Semiconductor Processing. 2024; 180: 108559. doi: 10.1016/j.mssp.2024.108559 DOI: https://doi.org/10.1016/j.mssp.2024.108559
Zhang Q. Research on the development of China’s third-generation semiconductor industry (Chinese). Science and Technology Square. 2024; 2: 19-25. doi: 10.13838/j.cnki.kjgc.2024.02.008
Casady JB, Johnson RW. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review. Solid-State Electronics. 1996; 39(10): 1409-1422. doi: 10.1016/0038-1101(96)00045-7 DOI: https://doi.org/10.1016/0038-1101(96)00045-7
Hu D, Lin Q, Wu H, et al. Exploration of semiconductor technology development trends—Taking RF power amplifiers as an example (Chinese). Journal of Guilin University of Electronic Technology. 2023; 43(4): 271-281. doi: 10.16725/j.cnki.cn45-1351/tn.2023.04.001
Zhang Y, Zhang Q. SiC chip miniaturization and development trend (Chinese). Electric Drive for Locomotives. 2023; 5: 46-62. doi: 10.13890/j.issn.1000-128X.2023.05.005
Srivastava M, Singh J, Mishra DK, et al. Review on the various strategies adopted for the polishing of silicon wafer—A chemical perspective. Materials Today: Proceedings. 2022; 63: 62-68. doi: 10.1016/j.matpr.2022.02.300 DOI: https://doi.org/10.1016/j.matpr.2022.02.300
Dong Z, Lin Y. Ultra-thin wafer technology and applications: A review. Materials Science in Semiconductor Processing. 2020; 105: 104681. doi: 10.1016/j.mssp.2019.104681 DOI: https://doi.org/10.1016/j.mssp.2019.104681
Zhang R, Yu X, Cheng R, et al. Progress and Trends in Integrated Circuit Advanced Manufacturing Technology (Chinese). Frontiers of Data & Computing. 2021; 3(5): 28-39.
Dranczewski J, Fischer A, Tiwari P, et al. Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers. Micro and Nano Engineering. 2023; 19: 100196. doi: 10.1016/j.mne.2023.100196 DOI: https://doi.org/10.1016/j.mne.2023.100196
Baek KH, Edgar TF, Song K, et al. An effective procedure for sensor variable selection and utilization in plasma etching for semiconductor manufacturing. Computers & Chemical Engineering. 2014; 61: 20-29. doi: 10.1016/j.compchemeng.2013.09.016 DOI: https://doi.org/10.1016/j.compchemeng.2013.09.016
Qin Y, Zhao C, Gao F. Multi-stage Process Analysis and Modelling based Online Monitoring for Chip Packaging Process. IFAC-PapersOnLine. 2015; 48(28): 993-998. doi: 10.1016/j.ifacol.2015.12.260 DOI: https://doi.org/10.1016/j.ifacol.2015.12.260
Kong X, Li S, Li H, et al. Distribution patterns of reactive species in the interaction between atmospheric pressure plasma jet and fiber membrane. Plasma Sources Science and Technology. 2023; 32(10): 105004. doi: 10.1088/1361-6595/acfd5b DOI: https://doi.org/10.1088/1361-6595/acfd5b
Kong X, Li H, Yang W, et al. Atmospheric pressure plasma jet impinging on fiber arrays: Penetration pattern determined by fiber spacing. Applied Physics Letters. 2023; 122(8). doi: 10.1063/5.0139361 DOI: https://doi.org/10.1063/5.0139361
Ma G, Li S, Liu F, et al. A Review on Precision Polishing Technology of Single-Crystal SiC. Crystals. 2022; 12(1): 101. doi: 10.3390/cryst12010101 DOI: https://doi.org/10.3390/cryst12010101
Li Z, Jiang F, Jiang Z, et al. Energy beam-based direct and assisted polishing techniques for diamond: A review. International Journal of Extreme Manufacturing. 2023; 6(1): 012004. doi: 10.1088/2631-7990/acfd67 DOI: https://doi.org/10.1088/2631-7990/acfd67
Geng Z, Huang N, Castelli M, et al. Polishing Approaches at Atomic and Close-to-Atomic Scale. Micromachines. 2023; 14(2): 343. doi: 10.3390/mi14020343 DOI: https://doi.org/10.3390/mi14020343
Zong WJ, Cheng X, Zhang JJ. Atomistic origins of material removal rate anisotropy in mechanical polishing of diamond crystal. Carbon. 2016; 99: 186-194. doi: 10.1016/j.carbon.2015.12.001 DOI: https://doi.org/10.1016/j.carbon.2015.12.001
Luo Q, Lu J, Xu X, et al. Removal mechanism of sapphire substrates (0001, 112(–)0 and 101(–)0) in mechanical planarization machining. Ceramics International. 2017; 43(18): 16178-16184. doi: 10.1016/j.ceramint.2017.08.194 DOI: https://doi.org/10.1016/j.ceramint.2017.08.194
Kubota A, Fukuyama S, Ichimori Y, et al. Surface smoothing of single-crystal diamond (100) substrate by polishing technique. Diamond and Related Materials. 2012; 24: 59-62. doi: 10.1016/j.diamond.2011.10.022 DOI: https://doi.org/10.1016/j.diamond.2011.10.022
Kubota A, Nagae S, Touge M. Improvement of material removal rate of single-crystal diamond by polishing using H2O2 solution. Diamond and Related Materials. 2016; 70: 39-45. doi: 10.1016/j.diamond.2016.09.028 DOI: https://doi.org/10.1016/j.diamond.2016.09.028
Tatsumi N, Harano K, Ito T, et al. Polishing mechanism and surface damage analysis of type IIa single crystal diamond processed by mechanical and chemical polishing methods. Diamond and Related Materials. 2016; 63: 80-85. doi: 10.1016/j.diamond.2015.11.021 DOI: https://doi.org/10.1016/j.diamond.2015.11.021
Li Q, Liu L, Yu J, et al. Investigation on chemical mechanical polishing of Ga-faced GaN crystal with weak alkaline slurry. Applied Surface Science. 2024; 653: 159396. doi: 10.1016/j.apsusc.2024.159396 DOI: https://doi.org/10.1016/j.apsusc.2024.159396
Deng H, Hosoya K, Imanishi Y, et al. Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry. Electrochemistry Communications. 2015; 52: 5-8. doi: 10.1016/j.elecom.2015.01.002 DOI: https://doi.org/10.1016/j.elecom.2015.01.002
Hu Y, Shi D, Hu Y, et al. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping. Materials. 2018; 11(10): 2022. doi: 10.3390/ma11102022 DOI: https://doi.org/10.3390/ma11102022
Chen G, Pan L, Luo H, et al. Chemical mechanical polishing of silicon carbide (SiC) based on coupling effect of ultrasonic vibration and catalysis. Journal of Environmental Chemical Engineering. 2023; 11(5): 111080. doi: 10.1016/j.jece.2023.111080 DOI: https://doi.org/10.1016/j.jece.2023.111080
Deng H, Hosoya K, Imanishi Y, et al. Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry. Electrochemistry Communications. 2015; 52: 5-8. doi: 10.1016/j.elecom.2015.01.002 DOI: https://doi.org/10.1016/j.elecom.2015.01.002
Wang L. Research on Electrochemical Mechanical Polishing Process of Silicon Carbide Crystals (Chinese) [Master’s thesis]. Dalian University of Technology; 2022.
Sidpara A, Jain VK. Nano–level finishing of single crystal silicon blank using magnetorheological finishing process. Tribology International. 2012; 47: 159-166. doi: 10.1016/j.triboint.2011.10.008 DOI: https://doi.org/10.1016/j.triboint.2011.10.008
Ma X, Tian Y, Qian C, et al. Experimental investigation on magnetorheological shear thickening polishing characteristics for SiC substrate. Ceramics International. 2024; 50(20): 40069-40078. doi: 10.1016/j.ceramint.2024.07.392 DOI: https://doi.org/10.1016/j.ceramint.2024.07.392
Jang KI, Nam E, Lee CY, et al. Mechanism of synergetic material removal by electrochemomechanical magnetorheological polishing. International Journal of Machine Tools and Manufacture. 2013; 70: 88-92. doi: 10.1016/j.ijmachtools.2013.03.011 DOI: https://doi.org/10.1016/j.ijmachtools.2013.03.011
Saraswathamma K, Jha S, Venkateswara Rao P. Rheological behaviour of Magnetorheological polishing fluid for Si polishing. Materials Today: Proceedings. 2017; 4(2): 1478-1491. doi: 10.1016/j.matpr.2017.01.170 DOI: https://doi.org/10.1016/j.matpr.2017.01.170
Yin T, Zhao P, Doi T, et al. Effect of Using High-Pressure Gas Atmosphere with UV Photocatalysis on the CMP Characteristics of a 4H-SiC Substrate. ECS Journal of Solid State Science and Technology. 2021; 10(2): 024010. doi: 10.1149/2162-8777/abe7a8 DOI: https://doi.org/10.1149/2162-8777/abe7a8
Lu J, Wang Y, Luo Q, et al. Photocatalysis assisting the mechanical polishing of a single-crystal SiC wafer utilizing an anatase TiO2-coated diamond abrasive. Precision Engineering. 2017; 49: 235-242. doi: 10.1016/j.precisioneng.2017.02.011 DOI: https://doi.org/10.1016/j.precisioneng.2017.02.011
Kawabata Y, Taniguchi J, Miyamoto I. XPS studies on damage evaluation of single-crystal diamond chips processed with ion beam etching and reactive ion beam assisted chemical etching. Diamond and Related Materials. 2004; 13(1): 93-98. doi: 10.1016/j.diamond.2003.09.005 DOI: https://doi.org/10.1016/j.diamond.2003.09.005
Luo Q, Chen J, Cheng Z, Lu J. Research progress and development trend of grinding and polishing technology of silicon carbide substrate (Chinese). Journal of Hunan University (Natural Sciences). 2024; 51(4): 140-152. doi:10.16339/j.cnki.hdxbzkb.2024180
Niu S, Chen Y, Wang Y, et al. Chemical mechanical polishing process of gallium nitride chips (Chinese). Science Technology and Engineering. 2020; 20(19): 7639-7643.
Sun X, Li J, Zhang W, et al. Research progress on material removal non-uniformity in chemical mechanical polishing of silicon carbide (Chinese). Journal of Synthetic Crystals. 2024; 53(4): 585-599. doi: 10.16553/j.cnki.issn1000-985x.20240013.001
Xu H, Wang J, Li Q, Pan F. Research progress in chemical mechanical polishing of silicon carbide wafers (Chinese). Modern Manufacturing Engineering. 2022; 6: 153-161+116.
Li Y. Experimental Study on Optimization of Chemical Mechanical Polishing Process for Silicon Carbide Wafer (Chinese) [Master’s thesis]. Henan University of Technology; 2023.
Li H, Ren K, Yin Z, et al. A review of research on ultrasonic vibration assisted abrasive flow polishing technology (Chinese). Journal of Mechanical Engineering. 2021; 57(9): 233-253. DOI: https://doi.org/10.3901/JME.2021.09.233
Chen G, Xiao Q. Research progress on polishing process of single crystal sapphire substrate (Chinese). Tool Engineering. 2018; 52(3): 3-9. doi: 10.16567/j.cnki.1000-7008.2018.03.001
Tang A. Research on the Mechanism of Vibration Assisted Photocatalytic Polishing of Silicon Carbide (Chinese) [Master’s thesis]. Shenyang University of Technology; 2023.
Zhu X, Gui Y, Fu H, et al. Photocatalytic assisted chemical mechanical polishing for silicon carbide using developed ceria coated diamond core-shell abrasives. Tribology International. 2024; 197: 109827. doi: 10.1016/j.triboint.2024.109827 DOI: https://doi.org/10.1016/j.triboint.2024.109827
Xiao H, Dai Y, Duan J, et al. Material removal and surface evolution of single crystal silicon during ion beam polishing. Applied Surface Science. 2021; 544: 148954. doi: 10.1016/j.apsusc.2021.148954 DOI: https://doi.org/10.1016/j.apsusc.2021.148954
Mi S, Toros A, Graziosi T, et al. Non-contact polishing of single crystal diamond by ion beam etching. Diamond and Related Materials. 2019; 92: 248-252. doi: 10.1016/j.diamond.2019.01.007 DOI: https://doi.org/10.1016/j.diamond.2019.01.007
Yamamura K, Takiguchi T, Ueda M, et al. High-Integrity Finishing of 4H-SiC (0001) by Plasma-Assisted Polishing. Advanced Materials Research. 2010; 126-128: 423-428. doi: 10.4028/www.scientific.net/amr.126-128.423 DOI: https://doi.org/10.4028/www.scientific.net/AMR.126-128.423
Deng H, Yamamura K. Atomic-scale flattening mechanism of 4H-SiC (0001) in plasma assisted polishing. CIRP Annals. 2013; 62(1): 575-578. doi: 10.1016/j.cirp.2013.03.028 DOI: https://doi.org/10.1016/j.cirp.2013.03.028
Deng H, Ueda M, Yamamura K. Characterization of 4H-SiC (0001) surface processed by plasma-assisted polishing. The International Journal of Advanced Manufacturing Technology. 2014; 72: 1-7. doi: 10.1007/s00170-012-4430-7 DOI: https://doi.org/10.1007/s00170-012-4430-7
Ji J, Yamamura K, Deng H. Plasma assisted polishing technology for manufacturing single-crystal SiC atomic level surfaces (Chinese). Acta Physica Sinica. 2021; 70(6): 74-86. DOI: https://doi.org/10.7498/aps.70.20202014
Sun R, Yang X, Arima K, et al. High-quality plasma-assisted polishing of aluminum nitride ceramic. CIRP Annals. 2020; 69(1): 301-304. doi: 10.1016/j.cirp.2020.04.096 DOI: https://doi.org/10.1016/j.cirp.2020.04.096
Deng H, Endo K, Yamamura K. Plasma-assisted polishing of gallium nitride to obtain a pit-free and atomically flat surface. CIRP Annals. 2015; 64(1): 531-534. doi: 10.1016/j.cirp.2015.04.002 DOI: https://doi.org/10.1016/j.cirp.2015.04.002
Peguiron A, Moras G, Walter M, et al. Activation and mechanochemical breaking of C–C bonds initiate wear of diamond (110) surfaces in contact with silica. Carbon. 2016; 98: 474-483. doi: 10.1016/j.carbon.2015.10.098 DOI: https://doi.org/10.1016/j.carbon.2015.10.098
Yamamura K, Emori K, Sun R, et al. Damage-free highly efficient polishing of single-crystal diamond wafer by plasma-assisted polishing. CIRP Annals. 2018; 67(1): 353-356. doi: 10.1016/j.cirp.2018.04.074 DOI: https://doi.org/10.1016/j.cirp.2018.04.074
Luo H, Ajmal KM, Liu W, et al. Atomic-scale and damage-free polishing of single crystal diamond enhanced by atmospheric pressure inductively coupled plasma. Carbon. 2021; 182: 175-184. doi: 10.1016/j.carbon.2021.05.062 DOI: https://doi.org/10.1016/j.carbon.2021.05.062
Liu N, Sugimoto K, Yoshitaka N, et al. Effects of polishing pressure and sliding speed on the material removal mechanism of single crystal diamond in plasma-assisted polishing. Diamond and Related Materials. 2022; 124: 108899. doi: 10.1016/j.diamond.2022.108899 DOI: https://doi.org/10.1016/j.diamond.2022.108899
Nestler K, Böttger-Hiller F, Adamitzki W, et al. Plasma Electrolytic Polishing – An Overview of Applied Technologies and Current Challenges to Extend the Polishable Material Range. Procedia CIRP. 2016; 42: 503-507. doi: 10.1016/j.procir.2016.02.240 DOI: https://doi.org/10.1016/j.procir.2016.02.240
Huang Y, Wang C, Ding F, et al. Principle, process, and application of metal plasma electrolytic polishing: a review. The International Journal of Advanced Manufacturing Technology. 2021; 114(7-8): 1893-1912. doi: 10.1007/s00170-021-07012-7 DOI: https://doi.org/10.1007/s00170-021-07012-7
Ma G, Li S, Liu X, et al. Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC. Micromachines. 2021; 12(6): 606. doi: 10.3390/mi12060606 DOI: https://doi.org/10.3390/mi12060606
Zhang C. Simulation and Experimental Study on Ultrasonic Assisted Electrolyte Plasma Polishing of SiC Single Crystal (Chinese) [Master’s thesis]. Xi’an University of Technology; 2023. pp. 13-20.
Liu N, Yi R, Deng H. Study of initiation and development of local oxidation phenomena during anodizing of SiC. Electrochemistry Communications. 2018; 89: 27-31. doi: 10.1016/j.elecom.2018.02.013 DOI: https://doi.org/10.1016/j.elecom.2018.02.013
Chen Y, Yi J, Wang Z, et al. Experimental study on ultrasonic-assisted electrolyte plasma polishing of SUS304 stainless steel. The International Journal of Advanced Manufacturing Technology. 2022; 124(7-8): 2835-2846. doi: 10.1007/s00170-022-10646-w DOI: https://doi.org/10.1007/s00170-022-10646-w
Sano Y, Watanabe M, Yamamura K, et al. Polishing Characteristics of Silicon Carbide by Plasma Chemical Vaporization Machining. Japanese Journal of Applied Physics. 2006; 45(10B): 8277. doi: 10.1143/jjap.45.8277 DOI: https://doi.org/10.1143/JJAP.45.8277
Nakahama Y, Kanetsuki N, Funaki T, et al. Etching characteristics of GaN by plasma chemical vaporization machining. Surface and Interface Analysis. 2008; 40(12): 1566-1570. doi: 10.1002/sia.2955 DOI: https://doi.org/10.1002/sia.2955
Yamamura K, Yamamoto Y, Deng H. Preliminary Study on Chemical Figuring and Finishing of Sintered SiC Substrate Using Atmospheric Pressure Plasma. Procedia CIRP. 2012; 3: 335-339. doi: 10.1016/j.procir.2012.07.058 DOI: https://doi.org/10.1016/j.procir.2012.07.058
Nakanishi Y, Mukai R, Matsuyama S, et al. Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size. Materials Science Forum. 2020; 1004: 161-166. doi: 10.4028/www.scientific.net/msf.1004.161 DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.161
Ueda M, Shibahara M, Zettsu N, et al. Effect of Substrate Heating in Thickness Correction of Quartz Crystal Wafer by Plasma Chemical Vaporization Machining. Key Engineering Materials. 2010; 447-448: 218-222. doi: 10.4028/www.scientific.net/kem.447-448.218 DOI: https://doi.org/10.4028/www.scientific.net/KEM.447-448.218
Fang Z, Zhang Y, Li R, et al. An efficient approach for atomic-scale polishing of single-crystal silicon via plasma-based atom-selective etching. International Journal of Machine Tools and Manufacture. 2020; 159: 103649. doi: 10.1016/j.ijmachtools.2020.103649 DOI: https://doi.org/10.1016/j.ijmachtools.2020.103649
Fang Z. Study on the Process of Atmospheric Pressure Plasma Lateral Etching and Polishing of Single Crystal Silicon Wafers (Chinese) [Master’s thesis]. Harbin Institute of Technology; 2020.
Zhang L, Wu B, Zhang Y, et al. Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching. Applied Surface Science. 2023; 620: 156786. doi: 10.1016/j.apsusc.2023.156786 DOI: https://doi.org/10.1016/j.apsusc.2023.156786
Liu W, Xiao Y, Zhang Y, et al. Highly efficient and atomic-scale smoothing of single crystal diamond through plasma-based atom-selective etching. Diamond and Related Materials. 2024; 143: 110840. doi: 10.1016/j.diamond.2024.110840 DOI: https://doi.org/10.1016/j.diamond.2024.110840
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2024 Hui Yan, Shuang Xue, Peiwen Guo, Jiale He, Guangning Wang, Yinlong Zeng, Longfei Qie, Ruixue Wang
This work is licensed under a Creative Commons Attribution 4.0 International License.